| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2SC2620 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 452 |
2SC2636 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 453 |
2SC2647 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 454 |
2SC2690 |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 455 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 456 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 457 |
2SC2734 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 458 |
2SC2735 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 459 |
2SC2778 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 460 |
2SC2853 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 461 |
2SC2856 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 462 |
2SC3127 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 463 |
2SC3313 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 464 |
2SC3314 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 465 |
2SC3315 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 466 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 467 |
2SC3380 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 468 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 469 |
2SC3512 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 470 |
2SC3707 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 471 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 472 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 473 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 474 |
2SC3930 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 475 |
2SC3931 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 476 |
2SC3936 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 477 |
2SC4050 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 478 |
2SC4080 |
NPN Bipolar Transistor for HF/Wide Band Amplifiers |
ON Semiconductor |
| 479 |
2SC4196 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 480 |
2SC4197 |
Transistors>Amplifiers/Bipolar |
Renesas |
| | | |
