| No. |
Part Name |
Description |
Manufacturer |
| 451 |
IS61VPS10018-166TQI |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 452 |
IS61VPS10018-200B |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 453 |
IS61VPS10018-200BI |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 454 |
IS61VPS10018-200TQ |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 455 |
IS61VPS10018-200TQI |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 456 |
JPM160PS12 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 457 |
JPM160PS13 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 458 |
JPM160PS15 |
AC/DC Industrial Type 160 Watts |
XPiQ |
| 459 |
JPS250PS12 |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 460 |
JPS250PS12C |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 461 |
JPS250PS15 |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 462 |
JPS250PS15C |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 463 |
KPS11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 464 |
KPS11N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 465 |
KPS11N65D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 466 |
KPS11N65F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 467 |
KPS15N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 468 |
KPS15N65F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 469 |
MA4BPS101 |
PIN diode chip with offset bond pad |
MA-Com |
| 470 |
MA4BPS101 |
PIN Diode Chips with Offset Bond Pads |
Tyco Electronics |
| 471 |
MPS1201S-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 472 |
MPS1983 |
NPN silicon high frequency transistor 2.4dB 900MHz |
Motorola |
| 473 |
NA24F |
24-Lead Molded Dual-Inline Package, IPS1 |
National Semiconductor |
| 474 |
NDL5421PS1 |
1000 to 1600 nm optocal fiber communications. 50 um InGaAs PIN photo diode module. Without connector, SM-9/125, flat mount flange. |
NEC |
| 475 |
OR2C04A-2PS100 |
Field-Programmable Gate Arrays |
etc |
| 476 |
OR2C04A-2PS100I |
Field-Programmable Gate Arrays |
etc |
| 477 |
OR2C04A-2PS144 |
Field-Programmable Gate Arrays |
etc |
| 478 |
OR2C04A-2PS144I |
Field-Programmable Gate Arrays |
etc |
| 479 |
OR2C04A-2PS160 |
Field-Programmable Gate Arrays |
etc |
| 480 |
OR2C04A-2PS160I |
Field-Programmable Gate Arrays |
etc |
| | | |
