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Datasheets for RGE

Datasheets found :: 21381
Page: | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 |
No. Part Name Description Manufacturer
451 1N5408 3.0 AMPS. SILICON RECTIFIERS Surge Components
452 1N5817 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere Surge Components
453 1N5818 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere Surge Components
454 1N5819 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere Surge Components
455 1N5820 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere Surge Components
456 1N5821 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere Surge Components
457 1N5822 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere Surge Components
458 21DQ10 HIGH SURGE CAPABILITY 30VOLTS TROUGH 100VOLTS TYPE AVAILABLE Nihon
459 2322 58. . . . . . High Surge Suppression Varistors Vishay
460 2A01 2.0 AMPS. SILICON RECTIFIERS Surge Components
461 2A02 2.0 AMPS. SILICON RECTIFIERS Surge Components
462 2A03 2.0 AMPS. SILICON RECTIFIERS Surge Components
463 2A04 2.0 AMPS. SILICON RECTIFIERS Surge Components
464 2A05 2.0 AMPS. SILICON RECTIFIERS Surge Components
465 2A06 2.0 AMPS. SILICON RECTIFIERS Surge Components
466 2A07 2.0 AMPS. SILICON RECTIFIERS Surge Components
467 2N3137 NPN silicon transistor for large signal VHF and UHF applications Motorola
468 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
469 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
470 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
471 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
472 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
473 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
474 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
475 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
476 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
477 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
478 2SB1168 PNP Epitaxial Planar Silicon Transistors Large Current Switching Applications SANYO
479 2SB816 PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications SANYO
480 2SD1046 NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications SANYO


Datasheets found :: 21381
Page: | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 |



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