| No. |
Part Name |
Description |
Manufacturer |
| 4531 |
NDL5530C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE |
NEC |
| 4532 |
NDL5530C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE |
NEC |
| 4533 |
NE68530 |
NPN silicon high frequency transistor. |
NEC |
| 4534 |
NE68530-T1 |
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 4535 |
NSR0530P2 |
30 V SCHOTTKY BARRIER DIODE |
ON Semiconductor |
| 4536 |
NTE2530 |
Silicon Complementary Transistors High Voltage Driver |
NTE Electronics |
| 4537 |
NTE5176A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 4.7V. Zener test current Izt = 530mA. |
NTE Electronics |
| 4538 |
NTE5304 |
Silicon Bridge Rectifier, 1.5A |
NTE Electronics |
| 4539 |
NTE5305 |
Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 600V. |
NTE Electronics |
| 4540 |
NTE5306 |
Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 800V. |
NTE Electronics |
| 4541 |
NTE5307 |
Silicon Bridge Rectifier, 1.5A |
NTE Electronics |
| 4542 |
NTE5309 |
Single Phase Bridge Rectifier 4 Amp |
NTE Electronics |
| 4543 |
NTE5530 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 4544 |
NUS5530MN |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
ON Semiconductor |
| 4545 |
NX5302EH |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4546 |
NX5302EI |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4547 |
NX5302EJ |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4548 |
NX5302EK |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4549 |
NX5302SH |
1301 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4550 |
NX5302SI |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4551 |
NX5302SJ |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4552 |
NX5302SK |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications. |
NEC |
| 4553 |
NX5304 |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4554 |
NX5304EH |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4555 |
NX5304EK |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4556 |
NX5306 |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4557 |
NX5306EH |
1310 nm InGaAsP MQW FP laser diode for 155 Mb/s, 622 Mb/s and 1.25 Gb/s applications. |
NEC |
| 4558 |
NX5306EHNX5306EK |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4559 |
NX5306EHNX5306EK |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
| 4560 |
NX5306EK |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
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