No. |
Part Name |
Description |
Manufacturer |
4531 |
NTE6046 |
Silicon Power Rectifier Diode, 85 Amp |
NTE Electronics |
4532 |
NTE6047 |
Silicon Power Rectifier Diode, 85 Amp |
NTE Electronics |
4533 |
NTE6111 |
Silicon Power Rectifier Diode, 1100 Amp |
NTE Electronics |
4534 |
NTE6114 |
Silicon Power Rectifier Diode, 1100 Amp |
NTE Electronics |
4535 |
NTE6128 |
Silicon Power Rectifier Diode, 430 Amp |
NTE Electronics |
4536 |
NTE6129 |
Silicon Power Rectifier Diode, 700 Amp |
NTE Electronics |
4537 |
NTE6354 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4538 |
NTE6355 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4539 |
NTE6356 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4540 |
NTE6357 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4541 |
NTE6358 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4542 |
NTE6359 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4543 |
NTE6362 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4544 |
NTE6363 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4545 |
NTE6364 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4546 |
NTE6365 |
Silicon Power Rectifier Diode, 300 Amp |
NTE Electronics |
4547 |
NTE7080 |
Integrated Circuit Precision Voltage Reference Diode, 1.235V |
NTE Electronics |
4548 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
4549 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
4550 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4551 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4552 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4553 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4554 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4555 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4556 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4557 |
NTLGF3402P |
Power MOSFET and Schottky Diode, -20 V, -3.9 A, P-Channel |
ON Semiconductor |
4558 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
4559 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
4560 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
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