| No. |
Part Name |
Description |
Manufacturer |
| 4531 |
BU52055GWZ-E2 |
Omnipolar Detection Hall ICs |
ROHM |
| 4532 |
BU52061NVX |
Omnipolar Detection Hall ICs |
ROHM |
| 4533 |
BU52061NVX-TR |
Omnipolar Detection Hall ICs |
ROHM |
| 4534 |
BU52075GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4535 |
BU52075GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4536 |
BU52077GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4537 |
BU52077GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4538 |
BU52078GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4539 |
BU52078GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4540 |
BUD42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4541 |
BUD42D-001 |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4542 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4543 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 4544 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4545 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4546 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 4547 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
| 4548 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4549 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 4550 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4551 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4552 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 4553 |
BUL146-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4554 |
BUL146F |
Switchmode NPN bipolar power transistor for switching power supply applications |
Motorola |
| 4555 |
BUL147-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4556 |
BUL42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4557 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4558 |
BUL44-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4559 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 4560 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
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