| No. |
Part Name |
Description |
Manufacturer |
| 4561 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 4562 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 4563 |
2SK771 |
Low-Frequency General-Purpose Amp Applications |
SANYO |
| 4564 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 4565 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 4566 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 4567 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 4568 |
2T6551 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 4569 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 4570 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 4571 |
30JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4572 |
30NWK2CZ47 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Mode Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 4573 |
30QWK2C48 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Type Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 4574 |
30QWK2CZ47 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Type Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 4575 |
31DF6 |
LOW POWER LOSS, HIGH EFFICIENCY |
Nihon |
| 4576 |
31M327 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 4577 |
31M327-7 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 4578 |
31M327-9 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 4579 |
31SMX |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 4580 |
33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m�� up to 60 kHz) |
Motorola |
| 4581 |
34RC02 |
2-kb I2C Serial EEPROM/ Serial Presence Detect |
Catalyst Semiconductor |
| 4582 |
350PEQ100W |
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4583 |
350PEQ110W |
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4584 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4585 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4586 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4587 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4588 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4589 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 4590 |
3B45 |
Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module |
Analog Devices |
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