| No. |
Part Name |
Description |
Manufacturer |
| 4591 |
AIC1811ACV |
One-Cell Lithium-Ion Battery Protection IC |
Analog Integrations Corporation |
| 4592 |
AIC1811BCV |
One-Cell Lithium-Ion Battery Protection IC |
Analog Integrations Corporation |
| 4593 |
AIC1811CCV |
One-Cell Lithium-Ion Battery Protection IC |
Analog Integrations Corporation |
| 4594 |
AIC1821 |
One-Cell Lithium-Ion Battery Protection IC |
Analog Integrations Corporation |
| 4595 |
AIC1821ACV |
ONE-CELL LITHIUM-ION BATTERY PROTECTION IC |
Analog Integrations Corporation |
| 4596 |
AIC1821BCV |
ONE-CELL LITHIUM-ION BATTERY PROTECTION IC |
Analog Integrations Corporation |
| 4597 |
AIC1821CCV |
ONE-CELL LITHIUM-ION BATTERY PROTECTION IC |
Analog Integrations Corporation |
| 4598 |
AIC1821DCV |
ONE-CELL LITHIUM-ION BATTERY PROTECTION IC |
Analog Integrations Corporation |
| 4599 |
AM028R1-00 |
26�33 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
| 4600 |
AM038R1-00 |
33-43 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
| 4601 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4602 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4603 |
AM79C987 |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
| 4604 |
AM79C987JC |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
| 4605 |
AM79C987JCB |
Hardware Implemented Management Information Base (HIMIB) Device |
Advanced Micro Devices |
| 4606 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 4607 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 4608 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4609 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4610 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4611 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 4612 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4613 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4614 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4615 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4616 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4617 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 4618 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4619 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4620 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
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