| No. |
Part Name |
Description |
Manufacturer |
| 4591 |
IRF341IRF342 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
| 4592 |
IRF342 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
| 4593 |
IRF342 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4594 |
IRF343 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
| 4595 |
IRF343 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
| 4596 |
IRF343 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4597 |
IRF350 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 4598 |
IRF350 |
15A/ 400V/ 0.300 Ohm/ N-Channel Power MOSFET |
Intersil |
| 4599 |
IRF350 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4600 |
IRF350-353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 4601 |
IRF351 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 4602 |
IRF351 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 4603 |
IRF351 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4604 |
IRF3515L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 4605 |
IRF3515LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 4606 |
IRF3515S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4607 |
IRF3515SPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4608 |
IRF3515STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4609 |
IRF3515STRLPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4610 |
IRF3515STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4611 |
IRF352 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 4612 |
IRF352 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 4613 |
IRF352 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4614 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 4615 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 4616 |
IRF353 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4617 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 4618 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 4619 |
IRF3610S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 4620 |
IRF3610STRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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