| No. |
Part Name |
Description |
Manufacturer |
| 4621 |
STA2500DTR |
Bluetooth͐2;2; V2.1 + EDR ("Lisbon") for automotive applications |
ST Microelectronics |
| 4622 |
STDL130 ASIC |
Version 1.0 (1'st edition - Jan. 9th, 2001) |
Samsung Electronic |
| 4623 |
SY604 |
125 MHz Trigger PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
| 4624 |
SY605 |
125 MHz WRITE PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
| 4625 |
SYMBOLS |
Alphabetical list of symbols from SGS-ATES DISCRETE POWER DEVICES 3 EDITION 1977 |
SGS-ATES |
| 4626 |
T224162-22J |
256K x 16 DRAM EDO page mode, 22ns |
TM Technology |
| 4627 |
T224162-22S |
256K x 16 DRAM EDO page mode, 22ns |
TM Technology |
| 4628 |
T224162-25J |
256K x 16 DRAM EDO page mode, 25ns |
TM Technology |
| 4629 |
T224162-25S |
256K x 16 DRAM EDO page mode, 25ns |
TM Technology |
| 4630 |
T224162-28J |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 4631 |
T224162-28S |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 4632 |
T224162-35J |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 4633 |
T224162-35S |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 4634 |
T224162-45J |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 4635 |
T224162-45S |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 4636 |
T224162-50J |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 4637 |
T224162-50S |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 4638 |
T224162B |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4639 |
T224162B |
4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode |
TM Technology |
| 4640 |
T224162B-22 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4641 |
T224162B-25 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4642 |
T224162B-28 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4643 |
T224162B-35 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4644 |
T224162B-45 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4645 |
T224162B-50 |
256K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4646 |
T2316162A |
1024K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4647 |
T2316162A |
4.5 to 5.5V; 1.2W; 1024K x 16 dynamic RAM: EDO page mode |
TM Technology |
| 4648 |
T2316162A-45 |
1024K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4649 |
T2316162A-50 |
1024K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4650 |
T2316162A-60 |
1024K x 16 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| | | |
