Datasheets for EFFEC

Datasheets found :: 6722

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No.	Part Name	Description	Manufacturer
4621	IRF830	Power Field Effect Transistor	ON Semiconductor
4622	IRF830	500 V,power field effect transistor	TRANSYS Electronics Limited
4623	IRF830-D	Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS	ON Semiconductor
4624	IRF831	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A.	General Electric Solid State
4625	IRF832	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
4626	IRF833	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.	General Electric Solid State
4627	IRF840	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
4628	IRF841	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
4629	IRF842	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
4630	IRF843	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR	Motorola
4631	IRF9240SMD	200V Vdss P-Channel FET (field effect transistor)	SemeLAB
4632	IRFD112	Power MOSFET field effect power transistor.	General Electric Solid State
4633	IRFD113	Power MOSFET field effect power transistor.	General Electric Solid State
4634	IRFD213	(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage	Motorola
4635	IRFE230	200V Vdss N-Channel FET (field effect transistor)	SemeLAB
4636	IRFF110	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.	General Electric Solid State
4637	IRFF110	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
4638	IRFF111	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.	General Electric Solid State
4639	IRFF112	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.	General Electric Solid State
4640	IRFF113	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.	General Electric Solid State
4641	IRFF113	N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.	Motorola
4642	IRFF120	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.	General Electric Solid State
4643	IRFF121	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.	General Electric Solid State
4644	IRFF122	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.	General Electric Solid State
4645	IRFF123	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.	General Electric Solid State
4646	IRFF130	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A.	General Electric Solid State
4647	IRFF131	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.	General Electric Solid State
4648	IRFF132	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.	General Electric Solid State
4649	IRFF133	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.	General Electric Solid State
4650	IRFF310	Power MOSFET field effect power transistor. Drain-source voltage 400 V.	General Electric Solid State

Datasheets found :: 6722

Page: | 151 | 152 | 153 | 154 | 155 | 156 | 157 | 158 | 159 |