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Datasheets for FFECT

Datasheets found :: 6734
Page: | 151 | 152 | 153 | 154 | 155 | 156 | 157 | 158 | 159 |
No. Part Name Description Manufacturer
4621 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4622 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4623 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4624 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4625 IRF830 Power Field Effect Transistor ON Semiconductor
4626 IRF830 500 V,power field effect transistor TRANSYS Electronics Limited
4627 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
4628 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4629 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4630 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4631 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4632 IRF841 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4633 IRF842 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4634 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4635 IRF9240SMD 200V Vdss P-Channel FET (field effect transistor) SemeLAB
4636 IRFD112 Power MOSFET field effect power transistor. General Electric Solid State
4637 IRFD113 Power MOSFET field effect power transistor. General Electric Solid State
4638 IRFD213 (IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage Motorola
4639 IRFE230 200V Vdss N-Channel FET (field effect transistor) SemeLAB
4640 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
4641 IRFF110 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
4642 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
4643 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
4644 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
4645 IRFF113 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
4646 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
4647 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
4648 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
4649 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
4650 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State


Datasheets found :: 6734
Page: | 151 | 152 | 153 | 154 | 155 | 156 | 157 | 158 | 159 |



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