| No. |
Part Name |
Description |
Manufacturer |
| 4621 |
1S2371A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4622 |
1S2372A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4623 |
1S2373A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4624 |
1S2374A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4625 |
1S2375A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4626 |
1S2376A |
Silicon rectifier diode - bridge type |
Shindengen |
| 4627 |
1S2460 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 4628 |
1S2461 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 4629 |
1S2462 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 4630 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 4631 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 4632 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 4633 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 4634 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 4635 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 4636 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 4637 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 4638 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 4639 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 4640 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 4641 |
1S290 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 4642 |
1S290R |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 4643 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 4644 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4645 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4646 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4647 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4648 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4649 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4650 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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