| No. |
Part Name |
Description |
Manufacturer |
| 4621 |
JANTXV1N6764 |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 4622 |
JANTXV1N6764R |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 4623 |
JANTXV1N6765 |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 4624 |
JANTXV1N6765R |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 4625 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 4626 |
K4E641612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 4627 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 4628 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 4629 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 4630 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 4631 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 4632 |
K4E661612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 4633 |
K4E661612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 4634 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 4635 |
K4E661612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 4636 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 4637 |
K4F641612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 4638 |
K4F641612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 4639 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 4640 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 4641 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 4642 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 4643 |
K4F641612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 4644 |
K4F641612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 4645 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 4646 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 4647 |
K4F661612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 4648 |
K4F661612B-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 4649 |
K4F661612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 4650 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
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