| No. |
Part Name |
Description |
Manufacturer |
| 4651 |
K4E661612C-T50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4652 |
K4E661612C-T60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4653 |
K4E661612C-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4654 |
K4E661612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4655 |
K4E661612C-TC50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4656 |
K4E661612C-TC60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4657 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4658 |
K4E661612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4659 |
K4E661612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4660 |
K4E661612D |
CMOS DRAM |
Samsung Electronic |
| 4661 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 4662 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 4663 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 4664 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 4665 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 4666 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 4667 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 4668 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 4669 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 4670 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 4671 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 4672 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 4673 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 4674 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 4675 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 4676 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 4677 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 4678 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 4679 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 4680 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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