No. |
Part Name |
Description |
Manufacturer |
4711 |
ECQV1104JM |
Designed for application where high density insertion of components is required. |
Panasonic |
4712 |
ECQV1104JM |
Stacked Metallized Film Capacitor |
Panasonic |
4713 |
ECQV1104JM2 |
Film Capacitors (Electronic Equipment Use) ECQV(L)/(M) |
Panasonic |
4714 |
ECQV1104JM3 |
Film Capacitors (Electronic Equipment Use) ECQV(L)/(M) |
Panasonic |
4715 |
ECQV1104JMW |
Film Capacitors (Electronic Equipment Use) ECQV(L)/(M) |
Panasonic |
4716 |
ECWU1102JX5 |
Film Capacitors (Electronic Equipment Use) ECWU(X) |
Panasonic |
4717 |
ECWU1103JX5 |
Film Capacitors (Electronic Equipment Use) ECWU(X) |
Panasonic |
4718 |
ECWU1104JC9 |
Film Capacitors (Electronic Equipment Use) ECWU(C) |
Panasonic |
4719 |
ECWU1104KC9 |
Film Capacitors (Electronic Equipment Use) ECWU(C) |
Panasonic |
4720 |
ECWU1104V33 |
Film Capacitors (Electronic Equipment Use) ECWU(C) |
Panasonic |
4721 |
ECWU1105KCV |
Film Capacitors (Electronic Equipment Use) ECWU(C) |
Panasonic |
4722 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4723 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4724 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4725 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4726 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4727 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4728 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4729 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
4730 |
EDI411024C |
+ 5V (+/-10%),1M x 1 dynamic RAM CMOS, monolithic |
White Electronic Designs |
4731 |
EDI811024CS |
+ 5V (+/-10%), 1M x 1 static RAM CMOS, high speed monolithic |
White Electronic Designs |
4732 |
EDI8M11024C |
+ 5V (+/-10%),1M x 1 SRAM CMOS, high speed module |
White Electronic Designs |
4733 |
EE-SX1103 |
Photomicrosensor (Transmissive) |
Omron |
4734 |
EE-SX1107 |
Ultra-Compact Photomicrosensors with Surface-Mount Design |
Omron |
4735 |
EE-SX1108 |
Ultra-Compact Photomicrosensors with Surface-Mount Design |
Omron |
4736 |
EE-SX1109 |
Ultra-Compact Photomicrosensors with Surface-Mount Design |
Omron |
4737 |
EESX1109 |
Ultra-Compact Photomicrosensors with Surface-Mount Design |
Omron |
4738 |
EFD110 |
Germanium diode |
IPRS Baneasa |
4739 |
EFD110 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
4740 |
EFD110 |
Germanium Point Contact Diode |
IPRS Baneasa |
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