| No. |
Part Name |
Description |
Manufacturer |
| 4711 |
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4712 |
MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4713 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4714 |
MTD20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
| 4715 |
MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4716 |
MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4717 |
MTP12N06EZL-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4718 |
MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4719 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4720 |
MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4721 |
MTP5N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4722 |
MUB32DH |
LOW CURRENT HIGH EFFICIENCY LED LAMPS |
Micro Electronics |
| 4723 |
MUB32DH-5 |
LOW CURRENT HIGH EFFICIENCY RED LED LAMP |
Micro Electronics |
| 4724 |
MYB-1206 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 4725 |
MYB-1206-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 4726 |
MYB-1210-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 4727 |
MYB-1220-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 4728 |
MYB-1230-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 4729 |
MYB32DH |
LOW CURRENT HIGH EFFICIENCY LED LAMPS |
Micro Electronics |
| 4730 |
N7426 |
Quad 2-Input high voltage NAND gate |
Signetics |
| 4731 |
N7426A |
Quad 2-Input high voltage NAND gate |
Signetics |
| 4732 |
N7426F |
Quad 2-Input high voltage NAND gate |
Signetics |
| 4733 |
N80C186EA13 |
16-bit high-integration embedded processor. 13 MHz, 5 V |
Intel |
| 4734 |
N80C186EA20 |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 4735 |
N80C186EA25 |
16-bit high-integration embedded processor. 25 MHz, 5 V |
Intel |
| 4736 |
N80C186EB13 |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 4737 |
N80C186EB20 |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 4738 |
N80C186EB25 |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 4739 |
N80C186EBXX |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 4740 |
N80C186XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
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