| No. |
Part Name |
Description |
Manufacturer |
| 4741 |
AM150S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
| 4742 |
AM151 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4743 |
AM1510 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4744 |
AM1510S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 1000 V. |
Comchip Technology |
| 4745 |
AM151S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 100 V. |
Comchip Technology |
| 4746 |
AM152 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4747 |
AM152S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 200 V. |
Comchip Technology |
| 4748 |
AM154 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4749 |
AM154S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 400 V. |
Comchip Technology |
| 4750 |
AM156 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4751 |
AM156S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. |
Comchip Technology |
| 4752 |
AM158 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
| 4753 |
AM158S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. |
Comchip Technology |
| 4754 |
AM6071 |
Companding D-to-A Converter for Control System |
Advanced Micro Devices |
| 4755 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4756 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4757 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4758 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 4759 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 4760 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 4761 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4762 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4763 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4764 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4765 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4766 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 4767 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4768 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4769 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4770 |
AMC1601B |
CONTOUR DRAWING & BLOCK DIAGRAM |
Orient Display |
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