| No. |
Part Name |
Description |
Manufacturer |
| 4741 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 4742 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4743 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4744 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4745 |
3N204 |
N-channel-defletion dual-gate MOSFET. |
Motorola |
| 4746 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4747 |
3N205 |
N-channel-defletion dual-gate MOSFET. |
Motorola |
| 4748 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4749 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 4750 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4751 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4752 |
3N209 |
N-channel-defletion dual-gate MOSFET UHF communications. |
Motorola |
| 4753 |
3N211 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 4754 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4755 |
3N212 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 4756 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4757 |
3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 4758 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4759 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4760 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4761 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4762 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 4763 |
3N89 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 4764 |
3N96 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 4765 |
3N97 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 4766 |
3N98 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 4767 |
3N99 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 4768 |
3SK0139 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 4769 |
3SK0143 |
Silicon N-Channel 4-pin MOS FET |
Panasonic |
| 4770 |
3SK0144 |
Silicon N-Channel 4-pin MOS FET |
Panasonic |
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