| No. |
Part Name |
Description |
Manufacturer |
| 4741 |
BD3464FV |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
| 4742 |
BD3464FV-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
| 4743 |
BD3465FV |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
| 4744 |
BD3465FV-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
| 4745 |
BD37034FV-M |
General-Purpose Electronic Volume with Built-in Advanced Switch |
ROHM |
| 4746 |
BD37034FV-ME2 |
General-Purpose Electronic Volume with Built-in Advanced Switch |
ROHM |
| 4747 |
BD8372EFJ-M |
50V 200mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4748 |
BD8372EFJ-ME2 |
50V 200mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4749 |
BD8372HFP-M |
50V 200mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4750 |
BD8372HFP-MTR |
50V 200mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4751 |
BD8374EFJ-M |
50V 500mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4752 |
BD8374EFJ-ME2 |
50V 500mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4753 |
BD8374HFP-M |
50V 500mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4754 |
BD8374HFP-MTR |
50V 500mA 1-Channel LED Source Driver for Automotive |
ROHM |
| 4755 |
BD9251FV |
Amplifier for Pyroelectric Infrared Sensor |
ROHM |
| 4756 |
BD9251FV-E2 |
Amplifier for Pyroelectric Infrared Sensor |
ROHM |
| 4757 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 4758 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 4759 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 4760 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 4761 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 4762 |
BF178 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 4763 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4764 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4765 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 4766 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4767 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4768 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 4769 |
BF257 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 4770 |
BF258 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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