No. |
Part Name |
Description |
Manufacturer |
4741 |
PN6CU-2412E |
Input voltage: 24V, output voltage 12V (84mA), 1KV isolated 1W unregulated single output |
PEAK electronics |
4742 |
PN6CU-243R3E |
Input voltage: 24V, output voltage 3.3V (303mA), 1KV isolated 1W unregulated single output |
PEAK electronics |
4743 |
PN6CU-4805E |
Input voltage: 48V, output voltage 5V (200mA), 1KV isolated 1W unregulated single output |
PEAK electronics |
4744 |
PN6CU-4812E |
Input voltage: 48V, output voltage 12V (84mA), 1KV isolated 1W unregulated single output |
PEAK electronics |
4745 |
PPNGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
4746 |
PPNHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
4747 |
PS-117D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4748 |
PS-117D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4749 |
PS-117L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4750 |
PS-117L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4751 |
PS-R11D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4752 |
PS-R11D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4753 |
PS-R11L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4754 |
PS-R11L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4755 |
PS-R50D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4756 |
PS-R50D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4757 |
PS-R50L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
4758 |
PS-R50L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
4759 |
PS11011 |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4760 |
PS11013 |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4761 |
PS11014 |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4762 |
PS12012-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4763 |
PS12013-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4764 |
PS12014-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4765 |
PS12015 |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4766 |
PS12015-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4767 |
PS12017-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4768 |
PS12018-A |
FLAT-BASE TYPE INSULATED TYPE |
Powerex Power Semiconductors |
4769 |
PS21204 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
Mitsubishi Electric Corporation |
4770 |
PS21205 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE |
Mitsubishi Electric Corporation |
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