| No. |
Part Name |
Description |
Manufacturer |
| 4771 |
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4772 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4773 |
2SA1933 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 4774 |
2SA1934 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
| 4775 |
2SA1937 |
Transistor Silicon PNP Triple Diffused Type High Voltage Switching Applications |
TOSHIBA |
| 4776 |
2SA1939 |
Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 4777 |
2SA1939 |
Silicon PNP Power Transistors TO-3P(I) package |
Savantic |
| 4778 |
2SA1939 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4779 |
2SA1940 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 4780 |
2SA1940 |
Silicon PNP Power Transistors TO-3P(I) package |
Savantic |
| 4781 |
2SA1940 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4782 |
2SA1941 |
Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 4783 |
2SA1941 |
Silicon PNP Power Transistors TO-3P(I) package |
Savantic |
| 4784 |
2SA1941 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4785 |
2SA1942 |
Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL |
New Jersey Semiconductor |
| 4786 |
2SA1942 |
Silicon PNP Power Transistors TO-3PL package |
Savantic |
| 4787 |
2SA1942 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4788 |
2SA1943 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL |
New Jersey Semiconductor |
| 4789 |
2SA1943 |
Silicon PNP Power Transistors TO-3PL package |
Savantic |
| 4790 |
2SA1943 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4791 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4792 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4793 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4794 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 4795 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4796 |
2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 4797 |
2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 4798 |
2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 4799 |
2SA1960 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 4800 |
2SA1961 |
Silicon PNP epitaxial planer type |
Panasonic |
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