| No. |
Part Name |
Description |
Manufacturer |
| 4771 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4772 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4773 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4774 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4775 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4776 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4777 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4778 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4779 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 4780 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4781 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 4782 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 4783 |
GT30J122 |
Discrete IGBT |
TOSHIBA |
| 4784 |
GT30J122A |
IGBT for soft switching applications |
TOSHIBA |
| 4785 |
GT30J126 |
Discrete IGBT |
TOSHIBA |
| 4786 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4787 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 4788 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 4789 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 4790 |
GT30J341 |
Discrete IGBT |
TOSHIBA |
| 4791 |
GT35J321 |
IGBT for soft switching applications |
TOSHIBA |
| 4792 |
GT35MR21 |
IGBT for soft switching applications |
TOSHIBA |
| 4793 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 4794 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
| 4795 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 4796 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 4797 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 4798 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 4799 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 4800 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
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