| No. |
Part Name |
Description |
Manufacturer |
| 4801 |
2SCR341QTR |
NPN 100mA 400V Middle Power Transistor |
ROHM |
| 4802 |
2SCR346P |
NPN 100mA 400V Middle Power Transistor |
ROHM |
| 4803 |
2SCR346PT100 |
NPN 100mA 400V Middle Power Transistor |
ROHM |
| 4804 |
2SD1415 |
7A; 30W; V(ceo): 100V; NPN darlington transistor |
TOSHIBA |
| 4805 |
2SD1724 |
NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications |
SANYO |
| 4806 |
2SD1840 |
NPN Triple Diffused Planar Silicon Transistor 100V/4A Switching Applications |
SANYO |
| 4807 |
2SD1841 |
NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications |
SANYO |
| 4808 |
2SD1842 |
NPN Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications |
SANYO |
| 4809 |
2SD560 |
SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP/ 100 VOLT) |
Fujitsu Microelectronics |
| 4810 |
2SD600 |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 4811 |
2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 4812 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
| 4813 |
2SD896 |
NPN Triple Diffused Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
| 4814 |
2SF436 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4815 |
2SF437 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4816 |
2SF63 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4817 |
2SF64 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4818 |
2SF65 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4819 |
2SF66 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4820 |
2SF67 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4821 |
2SF68 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4822 |
2SF69 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4823 |
2SF70 |
Silicon-controlled rectifiers 10A |
TOSHIBA |
| 4824 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
| 4825 |
2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching |
Hitachi Semiconductor |
| 4826 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 4827 |
2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP |
ON Semiconductor |
| 4828 |
2SK3707 |
N-Channel Power MOSFET, 100V, 20A, 60mOhm, TO-220F-3SG |
ON Semiconductor |
| 4829 |
2SK3820 |
N-Channel Power MOSFET 100V 26A 60m Ohm TO-263-2L |
ON Semiconductor |
| 4830 |
2SK4065 |
N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2L |
ON Semiconductor |
| | | |
