| No. |
Part Name |
Description |
Manufacturer |
| 4801 |
R3131N40DA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Output delay time 200ms. Output type Nch open drain. Detection mode H series output. Taping type TR. |
Ricoh |
| 4802 |
R3131N40DC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Output delay time 200ms. Output type CMOS. Detection mode H series output. Taping type TR. |
Ricoh |
| 4803 |
R3131N40EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Standard output delay time 240ms. Output type Nch open drain. Detection mode H series output. Taping type TR. |
Ricoh |
| 4804 |
R3131N40EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Standard output delay time 240ms. Output type CMOS. Detection mode H series output. Taping type TR. |
Ricoh |
| 4805 |
R3131N40HA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Output delay time 400ms. Output type Nch open drain. Detection mode H series output. Taping type TR. |
Ricoh |
| 4806 |
R3131N40HC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 4.00V. Output delay time 400ms. Output type CMOS. Detection mode H series output. Taping type TR. |
Ricoh |
| 4807 |
RF3808S |
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) |
International Rectifier |
| 4808 |
RFG75N05E |
75A, 50V, 0.008 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 4809 |
RFG75N05E |
75A/ 50V/ 0.008 Ohm/ N-Channel Power MOSFET |
Intersil |
| 4810 |
RFM4N35 |
4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4811 |
RFM4N40 |
4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4812 |
RFP4N35 |
4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4813 |
RFP4N40 |
4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4814 |
RT922 |
Excellent audio performance / low distortion (0.005%) |
ST Microelectronics |
| 4815 |
RT922IYDT |
Excellent audio performance / low distortion (0.005%) |
ST Microelectronics |
| 4816 |
SA100 |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4817 |
SA100A |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4818 |
SA100C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 100.00 V. Test current IT = 1 mA. |
Bytes |
| 4819 |
SA100CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 100.00 V. Test current IT = 1 mA. |
Bytes |
| 4820 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4821 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4822 |
SA110C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 110.00 V. Test current IT = 1 mA. |
Bytes |
| 4823 |
SA110CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 110.00 V. Test current IT = 1 mA. |
Bytes |
| 4824 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4825 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4826 |
SA120C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
| 4827 |
SA120CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
| 4828 |
SA130 |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4829 |
SA130A |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 4830 |
SA130C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
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