| No. |
Part Name |
Description |
Manufacturer |
| 481 |
AGM4832C-FL-FBH-T |
0.3-6.5V; number of dots: 480 x 320dots; dot size:0.228 x 0.228mm; dot pitch:0.24 x 0.24mm; AZ display |
AZ Displays |
| 482 |
AGM4832C-FL-FBW-T |
0.3-6.5V; number of dots: 480 x 320dots; dot size:0.228 x 0.228mm; dot pitch:0.24 x 0.24mm; AZ display |
AZ Displays |
| 483 |
AGM4832D-FL-FBH-T |
0.3-6.5V; number of dots: 480 x 320dots; dot size:0.228 x 0.228mm; dot pitch:0.24 x 0.24mm; AZ display |
AZ Displays |
| 484 |
AGM4832D-FL-FBW-T |
0.3-6.5V; number of dots: 480 x 320dots; dot size:0.228 x 0.228mm; dot pitch:0.24 x 0.24mm; AZ display |
AZ Displays |
| 485 |
AMD ATHLON 64 |
Report of Management on Processor Performance Benchmarks AMD Athlon 64 Processor 3200+ |
Advanced Micro Devices |
| 486 |
AQV215 |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 487 |
AQV215A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 488 |
AQV215AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 489 |
AQV215AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 490 |
AT-320240Q1 |
AT-320240Q1 320 X 240 DOTS 1/240 DUTY |
Unknow |
| 491 |
BD675BPL |
40.000W Darlington NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 800 - 3200 hFE. Complementary BD676BPL |
Continental Device India Limited |
| 492 |
BSP 320 S |
N-Channel MOSFET, 60V, SOT-223, RDSon = 120mW, 2.9A |
Infineon |
| 493 |
BSS138BKS |
60 V, 320 mA dual N-channel Trench MOSFET |
Nexperia |
| 494 |
BSS138BKS |
60 V, 320 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 495 |
BSS138BKW |
60 V, 320 mA N-channel Trench MOSFET |
Nexperia |
| 496 |
BSS138BKW |
60 V, 320 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 497 |
BSS138PS |
60 V, 320 mA dual N-channel Trench MOSFET |
Nexperia |
| 498 |
BSS138PS |
60 V, 320 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 499 |
C1342 |
Channel photomultiplexer, 1/2 inche, window material quartz, dark current 320 pA. |
PerkinElmer Optoelectronics |
| 500 |
C1343 |
Channel photomultiplexer, 1/2 inche, window material UV glass, dark current 320 pA. |
PerkinElmer Optoelectronics |
| 501 |
C1344 |
Channel photomultiplexer, 1/2 inche, window material borosl., dark current 320 pA. |
PerkinElmer Optoelectronics |
| 502 |
C702 |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 503 |
C702CB |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 504 |
C702CP |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 505 |
C702LD |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 506 |
C702LM |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 507 |
C702LN |
Phase Control SCR 1000 Amperes Average 3200 Volts |
Powerex Power Semiconductors |
| 508 |
CA2850R |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
| 509 |
CA2850RH |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
| 510 |
CA2851R |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
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