No. |
Part Name |
Description |
Manufacturer |
481 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
482 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
483 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
484 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
485 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
486 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
487 |
2SK3521-01MR |
N-channel power MOSFET, 600V, 6A |
Fuji Electric |
488 |
2SK4099LS |
Power MOSFET 600V 8.5A 0.94 Ohm Nch Single TO-220F-3FS |
ON Semiconductor |
489 |
2SK4125 |
N-Channel Power MOSFET, 600V, 17A, 610mOhm, TO-3P-3L |
ON Semiconductor |
490 |
300U60A |
Diode Switching 600V 300A 2-Pin DO-9 |
New Jersey Semiconductor |
491 |
30DF6 |
Diode Switching 600V 3A |
New Jersey Semiconductor |
492 |
30S6 |
Diode Switching 600V 3A 2-Pin Case R |
New Jersey Semiconductor |
493 |
317B |
Micropower/ 600kHz PWM DC/DC Converters |
Linear Technology |
494 |
31GF6 |
Ultrafast Plastic Rectifier,Forward Current 3.0A, Reverse Voltage 600V |
Vishay |
495 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
496 |
3B30L60 |
3A three phase rectifier bridge 600V |
Texas Instruments |
497 |
3B60L60 |
6A three phase rectifier bridge 600V |
Texas Instruments |
498 |
3JC12 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
499 |
3JZ61 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
500 |
3N250 |
Diode Rectifier Bridge Single 600V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
501 |
3N257 |
Diode Rectifier Bridge Single 600V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
502 |
3PM6 |
3.2A 600V Single Phase Rectifier Bridge |
IPRS Baneasa |
503 |
3PM6 |
30A Single Phase Rectifier Bridge 600V |
IPRS Baneasa |
504 |
40506 |
1.7A 600V Silicon Controlled Rectifier |
RCA Solid State |
505 |
40555 |
5A 600V All-Diffused Silicon Controlled Rectifier for Inverter Applications |
RCA Solid State |
506 |
40670 |
8A Silicon Triacs 600V |
RCA Solid State |
507 |
40671 |
30A 600V Silicon Triacs |
RCA Solid State |
508 |
40672 |
30A 600V Silicon Triacs |
RCA Solid State |
509 |
40752 |
20A 600V Silicon Controlled Rectifier |
RCA Solid State |
510 |
40756 |
20A 600V Silicon Controlled Rectifier |
RCA Solid State |
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