| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 482 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 483 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 484 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 485 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 486 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 487 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 488 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 489 |
2023-3-2 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 490 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 491 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 492 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 493 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 494 |
2064 |
QUAD1.5ADARLINGTONSWITCHES |
Allegro MicroSystems |
| 495 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 496 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 497 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 498 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 499 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 500 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 501 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 502 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 503 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 504 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 505 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 506 |
2301 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 507 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 508 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 509 |
2301-2 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 510 |
2302 |
2.0 Watt - 20 Volts, Class C Microwave 2300 MHz |
GHz Technology |
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