| No. |
Part Name |
Description |
Manufacturer |
| 481 |
MCM6949YJ8 |
1M x 4 Bit Static Random Access Memory |
Motorola |
| 482 |
MCM6949YJ8R |
1M x 4 Bit Static Random Access Memory |
Motorola |
| 483 |
MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
| 484 |
MH25632BJ-7 |
Access time: 70 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
| 485 |
MH25632BJ-8 |
Access time: 80 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
| 486 |
MMN2114 |
1024 x 4 bit static RAM |
Microelectronica |
| 487 |
MMN2114-2 |
1024 x 4 bit static RAM |
Microelectronica |
| 488 |
MMN2114-3 |
1024 x 4 bit static RAM |
Microelectronica |
| 489 |
MMN2114-4 |
1024 x 4 bit static RAM |
Microelectronica |
| 490 |
MV21SC14 |
1024 x 4 bit static RAM |
PLESSEY Semiconductors |
| 491 |
NM10494 |
64k BiCMOS SRAM 16k x 4 bit |
National Semiconductor |
| 492 |
SN74LS261 |
2 Bit x 4 Bit Parallel Binary Multipliers |
Texas Instruments |
| 493 |
TC511402AJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 494 |
TC511402AP-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 495 |
TC511402ASJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 496 |
TC511402AZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 497 |
TC5116400BSJ |
4194304 word x 4 Bit Dynamic Ram |
TOSHIBA |
| 498 |
TC5116400J |
4194304 word x 4 Bit Dynamic Ram |
TOSHIBA |
| 499 |
TC514400AAZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 500 |
TC514400AAZL-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 501 |
TC51440JL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 502 |
TC51440JL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 503 |
TC51440ZL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 504 |
TC51440ZL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
| 505 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 506 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 507 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 508 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 509 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 510 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| | | |
