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Datasheets for -EFFECT

Datasheets found :: 2330
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No. Part Name Description Manufacturer
481 2N5558 Silicon N-CHANNEL Junction Field-Effect Transistor Type A Motorola
482 2N5558 N-Channel Junction FET (Field-Effect Transistor) Motorola
483 2N5911 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
484 2N5912 Dual N-Channel Junction Field-Effect Transistor CCSIT-CE
485 2N5912 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
486 2N6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
487 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
488 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
489 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
490 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
491 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
492 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
493 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
494 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
495 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
496 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
497 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
498 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
499 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
500 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
501 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
502 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
503 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
504 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
505 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
506 2N7000 N-channel enhancement mode field-effect transistor Philips
507 2N7002 N-channel enhancement mode field-effect transistor Philips
508 2SJ11 Field-effect transistor TOSHIBA
509 2SJ12 Field-effect transistor TOSHIBA
510 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation


Datasheets found :: 2330
Page: | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 |



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