No. |
Part Name |
Description |
Manufacturer |
481 |
MAX6808UR26+ |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
482 |
MAX6808UR26+T |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
483 |
MAX6808UR26-T |
Voltage detector. Reset output active-low, open-drain. Threshold reset 2.6V |
MAXIM - Dallas Semiconductor |
484 |
MAX6808UR32+T |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
485 |
MAX6808UR46 |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
486 |
MAX6808UR46+ |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
487 |
MAX6808UR46+T |
Voltage Detectors |
MAXIM - Dallas Semiconductor |
488 |
MAX6808UR46-T |
Voltage detector. Reset output active-low, open-drain. Threshold reset 4.6V |
MAXIM - Dallas Semiconductor |
489 |
MAX6808US26-T |
Voltage detector. Reset output active-low, open-drain. Threshold reset 2.6V |
MAXIM - Dallas Semiconductor |
490 |
MAX6808US46-T |
Voltage detector. Reset output active-low, open-drain. Threshold reset 4.6V |
MAXIM - Dallas Semiconductor |
491 |
MCP608 |
The MCP608 operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 �A and an offset voltage that is less than 250 �V. The MCP608uses Microchip's advanced CMOS technology, which pr |
Microchip |
492 |
MH51208UNA-10 |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
493 |
MH51208UNA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
494 |
MH51208UNA-12 |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
495 |
MH51208UNA-12L |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
496 |
MH51208UNA-15 |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
497 |
MH51208UNA-15L |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
498 |
MH51208UNA-85 |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
499 |
MH51208UNA-85L |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
500 |
MM002-08U |
3 Phase Bridge |
Microsemi |
501 |
NJM78L08UA |
3 - TERMINAL POSTIVE VOLTAGE REGULATOR |
New Japan Radio |
502 |
NL27WZ08US |
Dual 2 Input AND Gate |
ON Semiconductor |
503 |
NM24C08U |
8K-Bit Serial EEPROM 2-Wire Bus Interface |
Fairchild Semiconductor |
504 |
NX3P1108UK |
Logic controlled high-side power switch |
NXP Semiconductors |
505 |
PCA1608U |
32 kHz watch circuits with EEPROM |
Philips |
506 |
PI74SXT2G08UEX |
SOTiny Gate STX Dual 2-Input AND |
Pericom Technology |
507 |
PI74SXT2G08UX |
SOTiny Gate STX Dual 2-Input AND |
Pericom Technology |
508 |
PLD08UAA |
PLD08 Series . 8A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
Power-One |
509 |
PLD08UAY |
PLD08 Series . 8A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
Power-One |
510 |
PLD08UBA |
PLD08 Series . 8A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
Power-One |
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