| No. |
Part Name |
Description |
Manufacturer |
| 481 |
HY62KF08802B-DD |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
Hynix Semiconductor |
| 482 |
HY62KF08802B-DDI |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
Hynix Semiconductor |
| 483 |
HY62KF08802B-SD |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
Hynix Semiconductor |
| 484 |
HY62KF08802B-SDI |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
Hynix Semiconductor |
| 485 |
ISL43120 |
Analog Switch, Dual SPST, NOpen/NOpen, Ron = 11 @ +12V, Single Supply +2.7 to +12 Volt, Ron Matched |
Intersil |
| 486 |
ISL43121 |
Analog Switch, Dual SPST, NClosed/NClosed, Ron = 11 @ +12V, Single Supply +2.7 to +12 Volt, Ron Matched |
Intersil |
| 487 |
ISL43122 |
Analog Switch, Dual SPST, NOpen/NClosed, Ron = 11 @ +12V, Single Supply +2.7 to +12 Volt, Ron Matched |
Intersil |
| 488 |
ISL43210 |
Analog Switch or 2-1 Multiplexer, Single SPDT, Ron = 11 @ +12V, Single Supply +2.7 to +12 Volt, Ron Matched |
Intersil |
| 489 |
ISL6411 |
Linear Regulator, Triple LDO with uP Reset & Sequencing, Ultra Low Noise, 2.7 to 3.8V Input, Fixed Output 1.8V/2.84V/2.84V |
Intersil |
| 490 |
K9F1208U0A-DCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 491 |
K9F1208U0A-DIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 492 |
K9F1208U0A-FCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 493 |
K9F1208U0A-FIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 494 |
K9F1208U0A-HCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 495 |
K9F1208U0A-HIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 496 |
K9F1208U0A-PCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 497 |
K9F1208U0A-PIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 498 |
K9F1208U0A-VCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 499 |
K9F1208U0A-VIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 500 |
K9F1208U0A-YCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 501 |
K9F1208U0A-YIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 502 |
K9F1216U0A-DCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 503 |
K9F1216U0A-DIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 504 |
K9F1216U0A-HCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 505 |
K9F1216U0A-HIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 506 |
K9F1216U0A-PCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 507 |
K9F1216U0A-PIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 508 |
K9F1216U0A-YCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 509 |
K9F1216U0A-YIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
| 510 |
K9F2808U0C-YCB0 |
16M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
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