| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 482 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 483 |
2SC1645 |
2SC1545M |
ROHM |
| 484 |
2SC1645 |
2SC1545M |
ROHM |
| 485 |
2SC1645S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 486 |
2SC1651S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 487 |
2SC1652 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 488 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 489 |
2SC1653-L |
Silicon transistor |
NEC |
| 490 |
2SC1653-T1B |
Silicon transistor |
NEC |
| 491 |
2SC1653-T2B |
Silicon transistor |
NEC |
| 492 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 493 |
2SC1654-L |
Silicon transistor |
NEC |
| 494 |
2SC1654-T1B |
Silicon transistor |
NEC |
| 495 |
2SC1654-T2B |
Silicon transistor |
NEC |
| 496 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 497 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 498 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 499 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 500 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 501 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 502 |
2SC1667 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 503 |
2SC1672 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 504 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
| 505 |
2SC1674 |
NPN Silicon Transistor |
NEC |
| 506 |
2SC1674 |
TO-92 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 507 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 508 |
2SC1675 |
NPN SILICON TRANSISTOR |
Micro Electronics |
| 509 |
2SC1675 |
NPN Silicon Transistor |
NEC |
| 510 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
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