| No. |
Part Name |
Description |
Manufacturer |
| 481 |
MCP3918A1-E/SS |
Mixed Signal- Energy Measurement |
Microchip |
| 482 |
MCP3918A1T-E/ML |
Mixed Signal- Energy Measurement |
Microchip |
| 483 |
MCP3918A1T-E/SS |
Mixed Signal- Energy Measurement |
Microchip |
| 484 |
MCR3918-10 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 800 V. |
Motorola |
| 485 |
MCR3918-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 50 V. |
Motorola |
| 486 |
MCR3918-3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 100 V. |
Motorola |
| 487 |
MCR3918-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 200 V. |
Motorola |
| 488 |
MCR3918-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 400 V. |
Motorola |
| 489 |
MCR3918-8 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 600 V. |
Motorola |
| 490 |
MD918 |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 491 |
MD918 |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 492 |
MD918 |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 493 |
MD918 |
NPN silicon dual amplifier transistor. |
Motorola |
| 494 |
MD918 |
NPN DUAL SILICON TRANSISTOR |
New Jersey Semiconductor |
| 495 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 496 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 497 |
MD918A |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 498 |
MD918A |
NPN silicon dual amplifier transistor. |
Motorola |
| 499 |
MD918A |
NPN DUAL SILICON TRANSISTOR |
New Jersey Semiconductor |
| 500 |
MD918AF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 501 |
MD918AF |
NPN silicon dual amplifier transistor. |
Motorola |
| 502 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 503 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
Central Semiconductor |
| 504 |
MD918B |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 505 |
MD918B |
NPN silicon dual amplifier transistor. |
Motorola |
| 506 |
MD918B |
NPN DUAL SILICON TRANSISTOR |
New Jersey Semiconductor |
| 507 |
MD918BF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 508 |
MD918F |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 509 |
MFR9180 |
RF Power Field Effect Transistors |
Motorola |
| 510 |
MGF0918A |
L & S BAND GaAs FET [ SMD non - matched ] |
Mitsubishi Electric Corporation |
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