| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SD2657 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 482 |
2SD2657K |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 483 |
2SD2672 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 484 |
2SD2673 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 485 |
2SD2674 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 486 |
2STA1695 |
High power PNP epitaxial planar bipolar transistor |
ST Microelectronics |
| 487 |
2STA1943 |
High power PNP epitaxial planar bipolar transistor |
ST Microelectronics |
| 488 |
2STC5242 |
High power NPN epitaxial planar bipolar transistor |
ST Microelectronics |
| 489 |
2STN2540 |
Low voltage fast-switching PNP power bipolar transistor |
ST Microelectronics |
| 490 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 491 |
30A02CH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 492 |
30A02MH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
| 493 |
30C02CH |
Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3 |
ON Semiconductor |
| 494 |
50A02CH |
Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 495 |
50A02MH |
Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
| 496 |
50C02CH |
Bipolar Transistor, 50V, 0.5A, Low VCE(sat) NPN Single CPH3 |
ON Semiconductor |
| 497 |
50C02MH |
Bipolar Transistor, 50V, 0.5A, Low VCE(sat) NPN Single MCPH3 |
ON Semiconductor |
| 498 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 499 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 500 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 501 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 502 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 503 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 504 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 505 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 506 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 507 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 508 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 509 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 510 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
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