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Datasheets for D FO

Datasheets found :: 3844
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No. Part Name Description Manufacturer
481 2N4198 Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications Motorola
482 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
483 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
484 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
485 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
486 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
487 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
488 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
489 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
490 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
491 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
492 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
493 2N4223 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
494 2N4224 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
495 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
496 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
497 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
498 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
499 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
500 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
501 2N4409 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
502 2N4410 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
503 2N4416 Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications Motorola
504 2N4427 Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications SGS-ATES
505 2N4428 Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications SGS-ATES
506 2N4441 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
507 2N4442 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
508 2N4443 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
509 2N4444 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
510 2N4924 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola


Datasheets found :: 3844
Page: | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 |



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