| No. |
Part Name |
Description |
Manufacturer |
| 481 |
AQV221NA |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 482 |
AQV221NAX |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 483 |
AQV221NAZ |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 484 |
AT-41511 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 485 |
AT-41511-BLK |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 486 |
AT-41511-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 487 |
AT-41533 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 488 |
AT-41533-BLK |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 489 |
AT-41533-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 490 |
AT41511 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 491 |
AT41533 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 492 |
AT90SC19236R |
High-performance, Low-power secureAVR� Enhanced RISC architecture. |
Atmel |
| 493 |
BAS70 |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 494 |
BAS70KFILM |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 495 |
BCY69 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 496 |
BF179C |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 497 |
BF257 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 498 |
BF258 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 499 |
BF259 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 500 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 501 |
BF457 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 502 |
BF458 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 503 |
BF459 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 504 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 505 |
BFG196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 506 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 507 |
BFG19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
| 508 |
BFP196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 509 |
BFP196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 510 |
BFP196W |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
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