| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SB265 |
Low-Speed Switching Transistor |
TOSHIBA |
| 482 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 483 |
2SB40 |
Low-Speed Switching Transistor |
TOSHIBA |
| 484 |
2SB424 |
Low-Speed Switching Transistor |
TOSHIBA |
| 485 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 486 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 487 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 488 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 489 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 490 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 491 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 492 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 493 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 494 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 495 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 496 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 497 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 498 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 499 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 500 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 501 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 502 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 503 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 504 |
2SC109 |
High-Speed Switching Transistor |
TOSHIBA |
| 505 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 506 |
2SC13 |
High-Speed Switching Transistor |
TOSHIBA |
| 507 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 508 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
| 509 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 510 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
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