| No. |
Part Name |
Description |
Manufacturer |
| 481 |
BA379 |
Silicon PIN Diode, serving as variable RF resistor recommended for use in AGC networks in VHF-UHF TV tuners |
Siemens |
| 482 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 483 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 484 |
BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration |
Infineon |
| 485 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 486 |
BAV46 |
Schottky barrier diode for use in X band doppler radar systems |
Mullard |
| 487 |
BAW24 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 488 |
BAW25 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 489 |
BAW26 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 490 |
BAW27 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 491 |
BAY96 |
Silicon planar diode for use in high efficiency multiplier circuits, input powers up to 30W |
Mullard |
| 492 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 493 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 494 |
BB833 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 495 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 496 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 497 |
BBY24 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 498 |
BBY25 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 499 |
BBY26 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 500 |
BBY27 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 501 |
BBY32CB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 502 |
BBY32DA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 503 |
BBY32DB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 504 |
BBY32EA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 505 |
BBY32FA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 506 |
BCY59 |
Silicon NPN epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY79 |
AEG-TELEFUNKEN |
| 507 |
BCY79 |
Silicon PNP epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY59 |
AEG-TELEFUNKEN |
| 508 |
BD2041AFJ |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 509 |
BD2041AFJ-E2 |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 510 |
BD2042AFJ |
2ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
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