| No. |
Part Name |
Description |
Manufacturer |
| 481 |
BQ24381DSGR |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 482 |
BQ24381DSGRG4 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 483 |
BQ24381DSGT |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 484 |
BQ24382 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front-End Protection IC with LDO Mode,10.5 OVP |
Texas Instruments |
| 485 |
BQ24382DSGR |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front-End Protection IC with LDO Mode,10.5 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 486 |
BQ24382DSGT |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front-End Protection IC with LDO Mode,10.5 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 487 |
BQ50002 |
Wireless Power Transmitter Analog Front End 32-VQFN -40 to 125 |
Texas Instruments |
| 488 |
BQ50002RHBR |
Wireless Power Transmitter Analog Front End 32-VQFN -40 to 125 |
Texas Instruments |
| 489 |
BQ50002RHBT |
Wireless Power Transmitter Analog Front End 32-VQFN -40 to 125 |
Texas Instruments |
| 490 |
BQ76925 |
Analog Front End for 3 to 6 Series Lithium-Ion Cells |
Texas Instruments |
| 491 |
BQ76925PW |
Analog Front End for 3 to 6 Series Lithium-Ion Cells 20-TSSOP -25 to 85 |
Texas Instruments |
| 492 |
BQ76925PWR |
Analog Front End for 3 to 6 Series Lithium-Ion Cells 20-TSSOP -25 to 85 |
Texas Instruments |
| 493 |
BQ76925RGER |
Analog Front End for 3 to 6 Series Lithium-Ion Cells 24-VQFN -25 to 85 |
Texas Instruments |
| 494 |
BQ76925RGET |
Analog Front End for 3 to 6 Series Lithium-Ion Cells 24-VQFN -25 to 85 |
Texas Instruments |
| 495 |
C7043 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 496 |
C7044 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 497 |
CC1190 |
850 - 950MHz RF Front End |
Texas Instruments |
| 498 |
CC1190RGVR |
850 - 950MHz RF Front End 16-VQFN -40 to 85 |
Texas Instruments |
| 499 |
CC1190RGVT |
850 - 950MHz RF Front End 16-VQFN -40 to 85 |
Texas Instruments |
| 500 |
CC2590 |
2.4-GHZ RF Front End |
Texas Instruments |
| 501 |
CC2591 |
2.4 GHz RF Front End |
Texas Instruments |
| 502 |
CC2595 |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 503 |
CC2595RGTR |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 504 |
CC2595RGTT |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 505 |
CFH77 |
GaAs HEMT for low noise front end amp... |
Infineon |
| 506 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 507 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 508 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 509 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 510 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
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