| No. |
Part Name |
Description |
Manufacturer |
| 481 |
MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 482 |
MGFK39V4045 |
14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 483 |
MGFL45V1920 |
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 484 |
MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 485 |
MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 486 |
MGFL48V1920 |
1.9-2.0 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 487 |
MGFS44V2735 |
2.7 - 2.5 GHz BAND 25W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 488 |
MGFS45V2123 |
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 489 |
MGFS45V2123A |
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 490 |
MGFS45V2325 |
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 491 |
MGFS45V2325A |
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 492 |
MGFS45V2527 |
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 493 |
MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 494 |
MGFS48B2122 |
2.11 - 2.17 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 495 |
MGFS48V2527 |
2.7 - 2.5 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 496 |
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 497 |
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 498 |
MT88V32 |
8 x 4 High Performance Video Switch Array (200 MHz Bandwidth), for (VDD - VEE) = 4.5 V to 13.2 V |
Zarlink Semiconductor |
| 499 |
MX536AJQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 500 |
MX536AKQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 501 |
MX536ASQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 502 |
MX636JQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
| 503 |
MX636KQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
| 504 |
NEZ1414-4A |
14GHz band high-output amplification |
NEC |
| 505 |
NJG1104KB2 |
800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 506 |
NJG1104KB2-C1 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 507 |
NJG1104KB2-C2 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 508 |
NJG1104KB2-C3 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 509 |
NJG1104KB2-C4 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 510 |
NJG1104KB2-C5 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
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