No. |
Part Name |
Description |
Manufacturer |
481 |
BD6965NUX-TR |
PWM speed control, thin package type |
ROHM |
482 |
BD6966NUX |
PWM speed control with stand-by function, thin package type |
ROHM |
483 |
BD6966NUX-GE2 |
PWM speed control with stand-by function, thin package type |
ROHM |
484 |
BD8316GWL |
Step-up and inverted 2-channel DC/DC converter with Built-in Power MOSFET |
ROHM |
485 |
BD8316GWL-E2 |
Step-up and inverted 2-channel DC/DC converter with Built-in Power MOSFET |
ROHM |
486 |
BD8317GWL |
Step-up and inverted 2-channel DC/DC converter with Built-in Power MOSFET |
ROHM |
487 |
BD8317GWL-E2 |
Step-up and inverted 2-channel DC/DC converter with Built-in Power MOSFET |
ROHM |
488 |
BD9G101G |
Step-down Switching Regulators with Built-in Power MOSFET |
ROHM |
489 |
BD9G101G-TR |
Step-down Switching Regulators with Built-in Power MOSFET |
ROHM |
490 |
BF177 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
491 |
BF178 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
492 |
BF184 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
493 |
BF185 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
494 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
495 |
BFY33 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
496 |
BFY34 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
497 |
BFY46 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
498 |
BGD502 |
550 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
499 |
BGD502 |
550 MHz, 18.5 dB gain power doubler amplifier |
Philips |
500 |
BGD702 |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
501 |
BGD702N |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
502 |
BGD702N |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
503 |
BGD704 |
750 MHz, 20 dB gain power doubler amplifier |
Philips |
504 |
BGD712 |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
505 |
BGD712 |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
506 |
BGD712C |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
507 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
NXP Semiconductors |
508 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
Philips |
509 |
BGD802 |
860 MHz, 18.5 dB gain power doubler amplifier |
Philips |
510 |
BGD804 |
860 MHz, 20 dB gain power doubler amplifier |
Philips |
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