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Datasheets for IST

Datasheets found :: 241071
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No. Part Name Description Manufacturer
481 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
482 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
483 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
484 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
485 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
486 1442 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
487 1445 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
488 1446 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
489 1457 Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network Vishay
490 1460 Bulk Metal Foil Technology, 20 Pin Dual-In-Line Hermetic Resistor Network Vishay
491 1461 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
492 1463 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
493 1464 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
494 1466 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
495 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
496 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
497 14T4 Thiristor - normal series SESCOSEM
498 14T4S Thyristors - normal series SESCOSEM
499 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
500 1516-35 35 W, 28 V, 1450-1550 MHz common base transistor GHz Technology
501 1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
502 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
503 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
504 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
505 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
506 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
507 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
508 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
509 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
510 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics


Datasheets found :: 241071
Page: | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 |



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