No. |
Part Name |
Description |
Manufacturer |
481 |
2N5757 |
2.5A Silicon Triacs |
RCA Solid State |
482 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
483 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
484 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
485 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
486 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
487 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
488 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
489 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
490 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
491 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
492 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
493 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
494 |
2N5914 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
495 |
2N5915 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
496 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
497 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
498 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
499 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
500 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
501 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
502 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
503 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
504 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
505 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
506 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
507 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
508 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
509 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
510 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
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