| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 482 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| 483 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| 484 |
2SC378 |
Silicon NPN planar transistor fT=150MHz |
TOSHIBA |
| 485 |
2SC380 |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 486 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 487 |
2SC380A |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 488 |
2SC3814 |
Class C, 940MHz 7 volt power transistor (This datasheet of NE090101-07 is also the datasheet of 2SC3814, see the Electrical Characteristics table) |
NEC |
| 489 |
2SC3815 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090301-07 is also the datasheet of 2SC3815, see the Electrical Characteristics table) |
NEC |
| 490 |
2SC3816 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) |
NEC |
| 491 |
2SC387AG |
Silicon NPN epitaxial planar transistor, VHF amplifier, UHF oscillator applications fT=1000MHz |
TOSHIBA |
| 492 |
2SC400 |
Silicon NPN epitaxial planar RF transistor, fT=300MHz |
TOSHIBA |
| 493 |
2SC4272 |
NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications |
SANYO |
| 494 |
2SC4735 |
NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications |
SANYO |
| 495 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
| 496 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 497 |
2SC608T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 498 |
2SC609T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 499 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
| 500 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 501 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 502 |
2SC998 |
Silicon NPN epitaxial planar VHF transistor ft=450MHz |
TOSHIBA |
| 503 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 504 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 505 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 506 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 507 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 508 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 509 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 510 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
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