No. |
Part Name |
Description |
Manufacturer |
481 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
482 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
483 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
484 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
485 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
486 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
487 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
488 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
489 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
490 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
491 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
492 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
493 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
494 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
495 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
496 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
497 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
498 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
499 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
500 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
501 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
502 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
503 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
504 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
505 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
506 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
507 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
508 |
2SC3547 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) |
TOSHIBA |
509 |
2SC3547A |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common collector) |
TOSHIBA |
510 |
2SC3547B |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common collector) |
TOSHIBA |
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