| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SD2693A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 482 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 483 |
2SD592 |
Silicon NPN epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 484 |
2SD592 |
Silicon PNP epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 485 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 486 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 487 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 488 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 489 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 490 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 491 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
| 492 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
| 493 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 494 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 495 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 496 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 497 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 498 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 499 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 500 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 501 |
3SK176A-T1 |
CATV TV tuner high-frequency amplification |
NEC |
| 502 |
3SK176A-T2 |
CATV TV tuner high-frequency amplification |
NEC |
| 503 |
3SK177-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 504 |
3SK177-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 505 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
| 506 |
3SK206-T1 |
UHF band high frequency amplification |
NEC |
| 507 |
3SK206-T2 |
UHF band high frequency amplification |
NEC |
| 508 |
3SK223-T1 |
UHF band high frequency amplification |
NEC |
| 509 |
3SK223-T2 |
UHF band high frequency amplification |
NEC |
| 510 |
3SK252-T1 |
VHF TV tuner RF amplification & mixer use N-channel MOS |
NEC |
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