| No. |
Part Name |
Description |
Manufacturer |
| 481 |
MNR18E0APJ |
Chip Resistor Networks |
ROHM |
| 482 |
MNR18ERAPJ |
Chip Resistor Networks |
ROHM |
| 483 |
MR1815SL |
High-Current Silicon Rectifier |
Motorola |
| 484 |
MR1819SL |
High-Current Silicon Rectifier |
Motorola |
| 485 |
MR18R1622(4/8/G)AF0 |
(16Mx16)*2(4/8/16)pcs RIMM� Module based on 256Mb A-die Data Sheet |
Samsung Electronic |
| 486 |
MR18R16224DF0 |
Key Timing Parameters |
Samsung Electronic |
| 487 |
MR18R16228DF0 |
Key Timing Parameters |
Samsung Electronic |
| 488 |
MR18R1622DF0 |
Key Timing Parameters |
Samsung Electronic |
| 489 |
MR18R1622GDF0 |
Key Timing Parameters |
Samsung Electronic |
| 490 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 491 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 492 |
MR18R16248EG0 |
Key Timing Parameters |
Samsung Electronic |
| 493 |
MR18R1624EG0-CK8 |
Key Timing Parameters |
Samsung Electronic |
| 494 |
MR18R1624EG0-CM8 |
Key Timing Parameters |
Samsung Electronic |
| 495 |
MR18R1624GEG0 |
Key Timing Parameters |
Samsung Electronic |
| 496 |
MR18R1628EG0-CK8 |
Key Timing Parameters |
Samsung Electronic |
| 497 |
MR18R1628EG0-CM8 |
Key Timing Parameters |
Samsung Electronic |
| 498 |
MR18R1628EG0-CT9 |
Key Timing Parameters |
Samsung Electronic |
| 499 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 500 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 501 |
MR18R162GEG0-CK8 |
Key Timing Parameters |
Samsung Electronic |
| 502 |
MR18R162GEG0-CM8 |
Key Timing Parameters |
Samsung Electronic |
| 503 |
MR18R162GEG0-CT9 |
Key Timing Parameters |
Samsung Electronic |
| 504 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 505 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 506 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 507 |
MUR180 |
1.0A, 800V ultra fast recovery rectifier |
MCC |
| 508 |
MUR180 |
1 Amp Super Fast Recovery Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 509 |
MUR180 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 510 |
MUR180E |
Diode Switching 800V 1A 2-Pin DO-41 Bag |
New Jersey Semiconductor |
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