| No. |
Part Name |
Description |
Manufacturer |
| 481 |
IDT7007L15G |
High-speed 32K x 8 dual-port static RAM, 15ns, low power |
IDT |
| 482 |
IDT7007L55GI |
High-speed 32K x 8 dual-port static RAM, 55ns, low power |
IDT |
| 483 |
IDT7007L55JI |
High-speed 32K x 8 dual-port static RAM, 55ns, low power |
IDT |
| 484 |
IDT7007L55PFI |
High-speed 32K x 8 dual-port static RAM, 55ns, low power |
IDT |
| 485 |
INA332 |
Low-Power, Single Supply, CMOS, Low Cost, Instumentation Amplifier |
Texas Instruments |
| 486 |
INA332AIDGKR |
Low-Power, Single Supply, CMOS, Low Cost, Instumentation Amplifier |
Texas Instruments |
| 487 |
INA332AIDGKRG4 |
Low-Power, Single Supply, CMOS, Low Cost, Instumentation Amplifier 8-VSSOP -55 to 125 |
Texas Instruments |
| 488 |
INA332AIDGKT |
Low-Power, Single Supply, CMOS, Low Cost, Instumentation Amplifier |
Texas Instruments |
| 489 |
INA332AIDGKTG4 |
Low-Power, Single Supply, CMOS, Low Cost, Instumentation Amplifier 8-VSSOP -55 to 125 |
Texas Instruments |
| 490 |
IR8400P |
V(cc): 80V; 5W; quad high side switch. For relay and solenoid drivers, lamp drivers, automotive fuel injector drivers, power supply output switching, motor drivers |
International Rectifier |
| 491 |
ISFPSMOC-48IRMETAL |
Transceivers by Form-factor MSA - iSFP Trx for Multirate Applications up to 2.67 Gbit/s, LC Connector, 1300 nm, 15 km |
Infineon |
| 492 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 493 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 494 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 495 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 496 |
K4E661612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 497 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 498 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 499 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 500 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 501 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 502 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 503 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 504 |
K4F661612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 505 |
K4F661612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 506 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 507 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 508 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 509 |
KF2002-GK42A |
Thermal Printheads > For POS, LABEL > KF200*-GK Series |
ROHM |
| 510 |
KF2002-GR40A |
Thermal Printheads > For POS, LABEL > KF200*-GR Series |
ROHM |
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