| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 482 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 483 |
2N5961_D27Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 484 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 485 |
2N5962_D74Z |
NPN General Purpose Amplifer |
Fairchild Semiconductor |
| 486 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 487 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 488 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 489 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 490 |
2N718A |
NPN Small Signal General Purpose Amplifiers |
Fairchild Semiconductor |
| 491 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 492 |
2N918 |
RF NPN transistor for VHF low noise amplifier |
IPRS Baneasa |
| 493 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 494 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 495 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 496 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 497 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 498 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 499 |
2SA1016 |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 500 |
2SA1016K |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 501 |
2SA1037AKT146 |
PNP General Purpose Amplification Transistor |
ROHM |
| 502 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 503 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 504 |
2SA1162 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 505 |
2SA1162GT1 |
General Purpose Amplifier Transistors |
ON Semiconductor |
| 506 |
2SA1163 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 507 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 508 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 509 |
2SA1434 |
PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications |
SANYO |
| 510 |
2SA1514KFRA |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| | | |
